发明名称 |
Light emitting device and method of manufacturing a semiconductor device |
摘要 |
Semiconductor layers for serving as active layers of a plurality of thin film transistors in a pixel are arranged in the same direction and irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers. It is possible to coincide the crystal growth direction with the carrier moving direction, and high field effect mobility can be obtained. Also, semiconductor layers for serving as active layers of a plurality of thin film transistors in a driving circuit and in a CPU are arranged in the same direction, and are irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers.
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申请公布号 |
US7317205(B2) |
申请公布日期 |
2008.01.08 |
申请号 |
US20020238050 |
申请日期 |
2002.09.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KUWABARA HIDEAKI |
分类号 |
H01L29/94;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/32;H01L29/12;H01L29/786;H01L31/0328 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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