| 摘要 |
A method of manufacturing an LCD is provided to simplify the manufacturing process and improve the yield rate by reducing the number of masks. A substrate(110) including a p-type TFT(thin film transistor) region, an n-type TFT region, and a storage region is prepared. A buffer layer, a semiconductor material, and metal are stacked on the substrate. The semiconductor material and the metal are etched to form a semiconductor layer in the p-type TFT region and the n-type TFT region and to form a semiconductor layer and a metal layer in the storage region. A gate electrode(111a) and a p+ layer are formed in the p-type TFT region. A gate electrode(111b) and an LDD(lightly doped drain) structure are formed in the n-type TFT region. A passivation layer(126) is formed and etched to form a contact hole. A barrier metal layer(119) is formed in the contact hole. Source electrodes(113a,113b) and drain electrodes(114a,114b) are formed in the passivation layer and the contact hole. |
