| 摘要 |
A method for fabricating an LCD is provided to form an active pattern and a storage electrode through one mask process by using diffraction exposure. A first substrate divided into a pixel part and a circuit part of first and second regions is provided. An active pattern is formed at the pixel part and the circuit part, and a storage electrode is formed on a predetermined region of the active pattern of the pixel part. A first insulating layer is formed on the first substrate. A conductive layer is formed on the first substrate. The conductive layer is patterned to form a gate electrode(221) formed of the conductive layer at the pixel part and the circuit part of the first and second regions, and p+ source/drain regions are formed at a predetermined region of the active pattern of the circuit part of the first region. N+ source/drain regions are formed at a predetermined region of the active pattern of the pixel part and the circuit part of the second region. A first interlayer insulating layer and a second interlayer insulating layer are formed on the first substrate. Portions of the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer are removed to form a first contact hole and a second contact hole exposing a source region and a drain region of the active pattern. A source electrode(222) electrically connected to the source region of the active pattern is formed through the first contact hole, and a drain electrode(223) electrically connected to the drain region of the active pattern is formed through the second contact hole. A pixel electrode(218) partially overlapping the drain electrode and electrically connected to the drain region is formed. The first substrate and the second substrate are bonded together. |
