METHOD FOR MANUFACTURING OF CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to prevent generation of an undercut in a process for etching a salicide prevention layer by adjusting obliquely a profile of a photoresist pattern. An active region is defined on a semiconductor substrate(101) by using an isolation layer. An oxide layer and a conductive layer for a gate electrode are sequentially laminated on the semiconductor substrate of the active region. A gate electrode(123) and a gate insulating layer are formed by patterning the conductive layer and the oxide layer. A spacer(126) is formed on a sidewall of the gate electrode. An impurity implantation process is performed to implant impurities into a source region and a drain region. A salicide prevention layer is formed on the entire surface of the semiconductor substrate.