| 摘要 |
An oxide single crystal having a composition of RExSi6 O1.5x+12 (RE: La, Ce, Pr, Nd or Sm, x: 8 to 10) is grown by the use of the Czochralski method in such a manner that the crystal growth orientation coincides with the c-axis direction. The solidification rate in the crystal growth (the weight of grown crystal/the weight of the raw material charged) is preferably less than 45 %.
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