| 摘要 |
A thin film transistor LCD and a fabrication method thereof are provided to eliminate direct sputtering damage to an active layer after depositing a first insulating layer on an active layer and then depositing a barrier metal layer. A transparent substrate(101) is divided into a thin film transistor region and a capacitor region. An active layer pattern and a storage pattern are formed on the transparent substrate. A first insulating layer(107) is form on the active layer pattern and the storage pattern. A barrier metal layer is formed on the first insulating layer on the storage pattern. A second insulating layer(115) is formed on the barrier metal layer and the first insulating layer. A gate electrode(117) and a capacitor upper electrode(119) are formed on the second insulating layer. A third insulating layer is formed on the second insulating layer including the gate electrode and the upper electrode, and includes first, second and third contact holes partially exposing a source region and a drain region of the active layer pattern, and the storage pattern and the barrier metal layer of the capacitor. A source electrode(127), a drain electrode(129) and a storage electrode(131) are formed on the third insulating layer, and are connected to the source region, the drain region and the storage pattern. A fourth insulating layer is formed on the entire substrate structure, and includes a fourth contact hole exposing the storage electrode. A pixel electrode(137) is formed on the fourth insulating layer and is connected with the storage electrode. |
