| 摘要 |
<p>A method of extracting an intrinsic parameter using modeling is provided to extract a correct parameter through modeling of an intrinsic region other than an extrinsic resistant component of a target of measurement formed on a wafer. A target(I) of measurement formed on a wafer is modelled together with resistance values of extrinsic resistant components(RD,RS) included in the target. The extrinsic resistant components have the resistance values which are previously measured. A voltage dropped caused by the extrinsic resistant components is subtracted from a bias voltage applied to the target to extract an intrinsic parameter caused by intrinsic resistant components of the target.</p> |
