THE FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to process efficiently a large-sized wafer by suppressing a use of harmful hexamethyldisilazane. An EUV(extreme ultraviolet) light generation unit irradiates EUV ultraviolet light onto a surface of a wafer or an atmospheric plasma generation unit irradiates atmospheric plasma onto the surface of the wafer to hydrophobize the surface of the wafer. A cooling process is performed to cool the wafer. A photoresist film is coated on the cooled wafer. The EUV ultraviolet light generation unit is arranged at an upper part of the wafer. The EUV ultraviolet light generation unit is moved above the wafer to scan the entire area of the wafer.