| 摘要 |
A CMP(Chemical Mechanical Polishing) slurry, and a method for chemical mechanical polishing a metal layer, an oxide layer, an insulating layer or a metal wiring by using the slurry are provided to improve the polishing ratio and selectivity to copper without the deterioration of polishing velocity, to enhance polishing smoothness and to minimize dishing and erosion. A CMP slurry comprises 0.1-30 wt% of an abrasive particle; 0.1-10 wt% of an oxidizing agent; 0.05-2 wt% of a compound having at least two amine groups; 0.01-1 wt% of a carboxylic acid polymer; and the balance of water. Preferably the abrasive particle is a metal oxide, an organic particle, or an organic/inorganic composite particle and has a primary particle size of 10-200 nm; and the compound having at least two amine groups is at least one selected from the group consisting of ethylenediamine, 1,2-diaminocyclohexane, diaminopropionic acid, 1,2-diaminopropane, 1,3-diaminopropane, diaminopropanol, diethylenetriamine, and 2-(aminomethyl)propane-1,3-diamine.
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