| 摘要 |
An electrostatic discharge protection element is provided to use an LVTSCR(low voltage trigger silicon controlled rectifier) with an improved operation speed as an electrostatic discharge protection element by lowering a triggering voltage. An N-type well(200) is selectively formed in a predetermined region in the surface of a P-type semiconductor substrate(100). First, second and third diffusion regions(210,220,230) are sequentially formed in the surface of the well. Fourth, fifth and sixth diffusion regions(240,250,260) are sequentially formed outside the surface of the well, adjacent to the third diffusion region. A first driving part(400) introduces the electrostatic current introduced into an input/output pad into the substrate through the fourth diffusion region, connected between the fourth diffusion region and the input/output pad. A second driving part(500) increases the voltage drop of the electrostatic current introduced into the substrate, connected between the sixth diffusion region and ground. The first and second diffusion regions can be connected to the input/output pad, and the fifth diffusion region can be connected to ground. |
