| 摘要 |
<p>A method for fabricating an organic TFT is provided to improve an adhesion characteristic between a substrate and a gate insulation layer by forming a gate insulation layer on the front surface of a substrate. An insulated substrate(51) is prepared in which a source electrode(53S) and a drain electrode(53D) are included. An organic semiconductor layer is formed on the insulated substrate. A laser treatment process is performed on the organic semiconductor layer to form an active layer(55P). A gate electrode is formed on the insulated substrate having the active layer by interposing a gate insulation layer. A passivation layer can be formed on the resultant structure, having a contact exposing a part of the gate electrode. A gate interconnection can be formed on the passivation layer, filling the contact and connected to the gate electrode.</p> |
