| 摘要 |
A method for manufacturing a semiconductor device is provided to control voids formed at an upper portion of a drain contact plug by filling the inlet portion of a void exposed at the upper portion of a drain contact plug using glue doped polysilicon. A first interlayer dielectric is formed on a semiconductor substrate(100) and then the first interlayer dielectric is etch to form drain contact holes having bended portion therein. A polysilicon layer is formed on the resultant structure so as to fill the drain contact hole. A void(a) is generated by the bending. A drain contact plug is formed by polishing, thereby forming a second interlayer dielectric(116) on the resultant structure. By etching the second interlayer dielectric, the drain contact plug is exposed. The void is exposed. By forming a glue doped polysilicon layer(122) on the resultant structure, an inlet portion of the void is filled. A barrier metal layer(124) is formed on the glue doped polysilicon layer and then a heat treatment is executed. A metal layer(126) is formed on the resultant structure and the polishing is executed to form a metal line.
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