| 摘要 |
<p>A method for fabricating a non-volatile memory device with a SONOS(substrate-oxide-nitride-oxide-silicon) structure is provided to improve a retention characteristic by forming a nano crystal in a charge trap layer so that charges are stably stored in the nano crystal. A tunnel oxide layer(102) and a first charge trap layer(104) are formed on a semiconductor substrate(100). A first nano crystal(106) made of silicon is formed in the first charge trap layer. After a second charge trap layer(108) is formed on the resultant structure, a second nano crystal(110) made of a titanium nitride layer is formed in the second charge trap layer. After a heat treatment process is performed, a blocking layer(112) and a conductive layer(114) for a control gate are sequentially formed on the resultant structure. The second charge trap layer is made of a silicon nitride layer, alumina or zirconium.</p> |
