| 摘要 |
A method for forming a metal line in a semiconductor device is provided to reduce resistance in trench implantation using a metal line by obtaining a wide contact area according to the removal of an insulating layer around a metal layer. First and second interlayer dielectrics(102,104), a stop layer(106), and an insulating layer(108) are sequentially formed on a semiconductor substrate(100). By etching a part of the insulating layer, a stop layer, and a second interlayer dielectric, a trench is formed. A first diffusing protection layer(112) and a first metal layer(114) are formed on the resultant structure and then the trench is filled, thereby forming a second metal layer pattern on the first metal layer. By sequentially etching the first metal layer, the first diffusion protection layer, and second and first interlayer dielectrics using the second metal layer pattern as a mask, a contact hole for opening an upper portion of the substrate is formed. A second diffusion protection layer(122) and a third metal layer(124) are formed on the resultant structure and then the contact hole is filled. Then, the polishing is executed until an upper portion of the insulating layer is exposed, thereby forming metal lines.
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