| 摘要 |
A semiconductor memory apparatus is provided to decrease a temporal maximum current generated in refresh operation during high temperature test of a semiconductor memory. A plurality of bank groups(10-1-10-n) comprises at least one bank. A delay unit(20) receives a refresh signal, and outputs the refresh signal inputted to the plurality of bank groups after different delay time. The delay unit has a plurality of serially-connected delay parts(20-1-20-n) receiving the refresh signal. An output of each node between the delay parts is inputted to each bank group.
|
