METHOD OF FABRICATING THE DUAL POLY GATE IN A SEMICONDUCTOR DEVICE

摘要

A method for forming a dual poly gate in a semiconductor device is provided to control generation of a defect caused by photoresist residue by eliminating the necessity of a high-density p-type impurity ion implantation process. A gate insulation layer(310) and a polysilicon layer(320) are formed on a semiconductor substrate(300) having first and second regions(210,220). The polysilicon layer in the first region is removed to expose the gate insulation layer in the first region. A polysilicon layer of a first conductivity type is deposited on the resultant structure. A planarization process is performed to expose the polysilicon layer in the second region. Impurity ions of a second conductivity type are implanted by using a mask layer pattern exposing the polysilicon layer in the second region. The process for removing the polysilicon layer in the first region can include the following steps. A photoresist layer pattern exposing the polysilicon layer in the first region is formed on the polysilicon layer. The exposed portion of the polysilicon layer is removed by an etch process using the photoresist layer pattern as an etch mask. The photoresist layer pattern is removed.