| 摘要 |
A method for manufacturing a TFT(Thin Film Transistor) array substrate is provided to form a gate insulating layer with a polymer scaffold and the composite thin film of nano particles and form the gate insulating layer in a coating process, not in a metallizing process such as PECVD(Plasma Enhanced Chemical Vapor Deposition), thereby improving permittivity, and facilitating and simplifying the process. A method for manufacturing a TFT array substrate comprises the following steps of: forming a gate electrode(112a) on a substrate(111); forming a first composite thin film with a structure that nano particles are scattered in a polymer scaffold and has the permittivity of 6 to 10 in the front of the substrate including the gate electrode; forming a semiconductor layer(114) on the first composite thin film of the upper part of the gate electrode; and forming separately source and drain electrodes(115a,115b) in both sides of the semiconductor layer. |
