发明名称 METHOD OF FORMING CARBON NANUTUBES STRUCTURE AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME
摘要 A method of forming a carbon nanotube structure for use in the fabrication of a field emission device using the same is provided to obtain a high grade carbon nanotube at low temperature, and therefore to realize extended product life, large area, low price, and reduced operating voltage. A method of forming a carbon nanotube structure includes the steps of: forming an electrode(112) over a substrate(110); forming a buffer layer(125) over the electrode; forming a catalyst layer(130) in form of particles over the buffer layer; etching the exposed buffer layer through the catalyst layer; and growing a carbon nanotube(150) from the catalyst layer that is prepared over the etched buffer layer. The buffer layer preferably includes an element selected from the group consisting of Al, B, Ga, In, Tl, Ti, Mo and Cr, and the catalyst layer includes an element selected from the group consisting of Fe, Co, and Ni. Further, a thickness of the buffer layer is 10 - 3000Å.
申请公布号 KR20080002072(A) 申请公布日期 2008.01.04
申请号 KR20060060663 申请日期 2006.06.30
申请人 SAMSUNG SDI CO., LTD. 发明人 KIM, HA JIN;HAN, IN TAEK;CHOI, YOUNG CHUL;JEONG, KWANG SEOK
分类号 B82B3/00;H01J1/30 主分类号 B82B3/00
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