| 摘要 |
A semiconductor structure is provided to obtain an electrical characteristic of guaranteeing excellent transformation efficiency by minimizing the problem of re-combination of charge carriers in various interfacial regions between semiconductor layers. A semiconductor substrate(10) of a conductivity type has a front surface(12) and a back surface(14). A first amorphous semiconductor(16) is positioned on the front surface of the substrate. A second amorphous semiconductor(22) is positioned on a part of the back surface of the substrate. The second amorphous semiconductor layer is compositionally classified according to its depth into a substantially intrinsic amorphous semiconductor layer on an interface with the substrate and a substantially conductive amorphous semiconductor layer on a confronting lateral surface, having a selected conductivity type and formed by incorporation of selected dopant atoms. The third amorphous semiconductor layer(32) is positioned on another part of the back surface of the substrate. The third amorphous semiconductor layer is compositionally classified according to its depth into a substantially intrinsic amorphous semiconductor layer on an interface with the substrate and a substantially conductive amorphous semiconductor layer on a confronting lateral surface, having a different conductivity type from that of the second amorphous semiconductor layer and formed by incorporation of selected dopant atoms. At least one electrical contact(30) is positioned on the second amorphous semiconductor layer, and at least one electrical contact(40) is positioned on the third amorphous semiconductor layer.
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