METHOD FOR FABRICATING FINE PATTERN IN SEMICONDUCTOR DEVICE

摘要

A method for fabricating a fine pattern of a semiconductor device is provided to realize easily the fine pattern patterning without a pattern deformation by maintaining perpendicularly an etch cross section of a first polymer layer. A method for fabricating a fine pattern of a semiconductor device includes the steps of: forming a first polymer layer containing a large amount of carbon on an upper part of an etch layer(22) and a second polymer layer containing a large amount of silicon in order; pattering the second polymer layer; etching the polymer layer adding an addition gas including carbon in an etch source gas; and etching the etch target layer. In the step of etching the first polymer layer by adding the addition gas including the carbon in the etch source gas, N2/O2 or N2/H2 is used as the source gas.