METHOD OF FORMING A GATE STRUCTURE OF NON-VOLATILE MEMORY DEVICE

摘要

A method for forming a gate structure of a non-volatile memory device is provided to improve a leakage current characteristic and a threshold voltage scattering of the non-volatile memory device by forming an interlayer dielectric made of a dual layer composed of a silicon oxide layer and a silicon oxynitride layer. A tunnel dielectric layer pattern(110a) and a floating gate(120a) are sequentially formed on a semiconductor substrate(100). An interlayer dielectric pattern(130a) is formed on the floating gate, and has a dual layer structure of a silicon oxide layer and a silicon oxynitride layer. A control gate(140a) is formed on the interlayer dielectric pattern. The silicon oxynitride layer is formed on the silicon oxide layer by an LPCVD(Low Pressure Chemical Vapor Deposition) process.