Method for fabricating thin film transistor used in e.g. LCD, involves patterning insulating layer underlying ashed pattern to form etch stopper and patterning source electrode and drain electrode with diffraction mask
摘要
<p>An active pattern and photoresist pattern are formed with a mask. The photoresist pattern is ashed based on the predetermined width of an etch stopper (57P2) formed from silicon nitride layer. An insulating layer underlying the ashed pattern is patterned to form the etch stopper. A source electrode and a drain electrode are patterned with mask (M3) e.g. diffraction mask. An independent claim is included for method for fabricating LCD device.</p>
