METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent the increment of resistance by forming a sealing oxide layer on an upper portion of a metal line before filling a metal interlayer dielectric. A barrier metal layer(102) and a metal layer are formed on a semiconductor substrate(100). Then, a part of the metal layer and the barrier metal layer are etched, thereby forming metal lines(106). A sealing oxide layer(108) is formed on the resultant structure. A metal interlayer dielectric(110) is formed on the resultant structure so as to fill between the metal lines. The metal layer is formed by tungsten using RIE(Reactive Ion Etching).