| 摘要 |
A TFT(Thin Film Transistor), a manufacturing method thereof, an LCD device using the same, and a manufacturing method thereof are provided to use a nano wire as a semiconductor layer, thereby increasing carrier mobility compared to an amorphous silicon TFT. A TFT comprises a gate electrode(111), a gate insulating layer(112), a semiconductor layer(160), a source electrode(130), and a drain electrode(131). The gate electrode is formed in a predetermined portion of the upper part of an insulating substrate(110). The gate insulating layer is formed in the front of the substrate including the gate electrode. The semiconductor layer is formed on the gate insulating layer corresponding to the gate electrode by a first self assembly monolayer(151), a second self assembly monolayer(152), and a nano wire cable(161) successively laminated. The source electrode and the drain electrode are formed at regular intervals in both sides of the semiconductor layer. |
