发明名称 |
APPARATUS FOR SEMICONDUCTOR PROCESS |
摘要 |
<p>A semiconductor processing apparatus is provided to remove interference of process gas and plasma generating sources between processes by installing a process space forming part like a cylinder valve. A gate(110) is formed in a reaction receptacle(100) wherein a substrate on which a semiconductor process is to be performed comes in and out through the gate. At least one shower head injects gas to perform a semiconductor process, installed in the upper portion of the reaction receptacle. At least one wafer support part(120) supports the substrate, installed in the lower portion of the reaction receptacle and respectively corresponding to each shower head. A process space forming part(400) seals a space including the shower head and the wafer support part and forms a process space for a semiconductor process, installed in the reaction receptacle. An exhaust system is connected to the process space forming part to perform a pressure control process and an exhaust process on the inside of the reaction receptacle and the inside of the process space formed by the process space forming part. The process space forming part can be a cylinder valve.</p> |
申请公布号 |
KR20080002633(A) |
申请公布日期 |
2008.01.04 |
申请号 |
KR20070050222 |
申请日期 |
2007.05.23 |
申请人 |
INTEGRATED PROCESS SYSTEMS LTD. |
发明人 |
PARK, SANG JUN;LEE, HO YOUNG;LEE, CHUN WOO |
分类号 |
H01L21/3065;H01L21/205;H01L21/677 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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