METHOD FOR FABRICATING THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE BY APPLYING SAID METHOD

摘要

A method for fabricating a TFT(thin film transistor) is provided to increase a dielectric constant by using a gate insulation layer as a composite layer in which an activated nano crystal is capsulated in a polymer cell to form a network combination. A gate electrode(112a) is formed on a substrate(111). A composite layer is formed on the resultant structure, having a structure in which nano crystals having a dielectric constant of at least 9 are capsulated in a polymer cell(113). A semiconductor layer(114) is formed on the composite layer on the gate electrode. Source and drain electrodes(115a,115b) are formed at both sides of the semiconductor layer. The composite layer can be an organic composite layer or an inorganic composite layer. The dielectric constant of the composite layer varies depending on the content or the kind of the nano crystals.