摘要 |
<p>A method of forming a photoresist pattern of a semiconductor device is provided to improve an etching resistance, prevent the photoresist pattern by an electron beam from decreasing, and increase the durability of an ion implantation. A method of forming a photoresist pattern(18) of a semiconductor device includes the steps of: forming a chemical amplified photoresist layer in an upper portion on semiconductor wafers(10); performing a bake process after performing an exposure process and an exposure process using a phase shift mask on the photoresist layer; obtaining a specific pattern by selectively eliminating the photoresist layer and treating the result with a developing solution; performing a TEOS(Tetraethyl Orthosilicate, Si(OC2H5)4) on a surface of the pattern; and performing an oxygen plasma treatment on the surface of the pattern.</p> |