发明名称 THIN FILM TRANSISTOR SUBSTRATE OF HORIZONTAL ELECTRONIC FIELD APPLYING TYPE
摘要 <p>A TFT(thin film transistor) of a horizontal electric field applying type is provided to stabilize the electric filed of a common voltage applied to a common electrode and to prevent an image distortion phenomenon caused by distortion of a common voltage by reducing the parasitic capacitance between a common electrode and a gate line. A pixel region is defined by a gate line(102) and a data line(104). A TFT(106) is connected to the gate line and the data line. A common line is parallel with the gate line. A source electrode(110) is connected to the data line. A drain electrode(112) is connected to the pixel electrode. A common electrode(118) crosses the gate line on a plane, and is vertically extended from the common line. A pixel electrode(114) is formed in the pixel region to be connected to the TFT. The pixel electrode and the common electrode form a horizontal electric field. A dummy layer(120) is formed between the gate line and the common electrode to include a region where at least the gate line crosses the common electrode. The dummy layer is made of a metal material like a source/drain electrode.</p>
申请公布号 KR20080001902(A) 申请公布日期 2008.01.04
申请号 KR20060060360 申请日期 2006.06.30
申请人 LG.PHILIPS LCD CO., LTD. 发明人 KANG, DONG JIN;KIM, TAE GYUN
分类号 H01L29/786 主分类号 H01L29/786
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