A TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A transistor of a semiconductor device is provided to increase a channel length without increasing the entire area of a semiconductor device by using a polysilicon pattern protruding from a predetermined region of an active region. A polysilicon pattern(170A) protrudes from the surface of an active region defined in a semiconductor substrate(100). A gate electrode is formed on the lateral and upper surfaces of the polysilicon pattern. The lateral and upper surfaces of the polysilicon pattern constitute a channel. The polysilicon pattern has substantially the same crystal structure as the semiconductor substrate.