| 摘要 |
A method for manufacturing a semiconductor device preventing abnormal oxidation of a metal electrode is provided to reduce TAT(Turn Around Time) without nitride film etching and cleaning processes. A method for manufacturing a semiconductor device preventing abnormal oxidation of a metal electrode(24) includes the steps of: forming a plurality of patterns including metal electrodes on a semiconductor substrate(21) at predetermined intervals; forming a nitride film at a front surface of the semiconductor substrate with the patterns; changing the nitride layer on a surface of the semiconductor substrate between the patterns into a first oxide film; and depositing a second oxide film for interlayer insulating to fill a gap between the patterns on the first oxide film.
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