| 摘要 |
A method for forming a landing plug of a semiconductor device is provided to check an excessive loss of a gate formed at a peripheral circuit area by forming a nitride film for barrier before performing a process of CMP(Chemical Mechanical Polishing). A method for forming a landing plug of a semiconductor device includes the steps of: forming an interlayer insulating film(27) on a semiconductor substrate(21) having gates(25) and a bonding area including several hard masks in a cell area and a peripheral circuit area; forming a contact hole(HL) for a landing plug simultaneously exposing the gates and the bonding area of the substrate by etching the interlayer insulating film of the cell area; forming a polysilicon film on the interlayer insulating film burying the contact hole; and performing CMP(Chemical Mechanical Polishing) in order to expose the hard masks of the cell area. Further, a nitride film for barrier is formed in order to prevent the gates formed at a peripheral circuit area from being damaged due to the CMP on the polysilicon film before performing a process of CMP.
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