HARDMASK COMPOSITION COATED UNDER PHOTORESIST AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THEREOF

摘要

A hard mask composition under a resist layer is provided to control the quantity of an alkoxy group of a final polycondensation material by adjusting the quantity of introduced water in a hydrolysis process of a compound. An organic silane-based polymerization material has an alkoxy group generated from a compound designated by the following chemical formula 1 or an alkoxy group generated from compounds designated by the following chemical formulas 1 and 2. A hard mask composition includes the organic silane-based polymerization material and a solvent. The organic silane-based polymerization material is a polycondensation material of a hydrolytic material designated by the following chemical formula 3 that is obtained from the compound designated by the following chemical formula 1, or a polycondensation material of a hydrolytic material designated by the following chemical formulas 3 and 4 that are respectively obtained from the compounds designated by the following chemical formulas 1 and 2. Chemical formula 1 is [RO]3Si-R' wherein R is methyl or ethyl and R' is substitution or non-substitution alkyl of a ring or non-ring shape. Chemical formula 2 is [RO]3Si-Ar wherein R is methyl or ethyl and Ar is a functional group including an aromatic ring. Chemical formula 3 is R'Si[OR]n[OH]3-n wherein R is methyl or ethyl, R' is substitution or non-substitution alkyl of a ring or non-ring shape, and n is 0-3. Chemical formula 4 is ArSi[OR]n[OH]3-n wherein R is methyl or ethyl, Ar is a functional group including an aromatic ring, and n is 0-3.