| 摘要 |
A semiconductor device is provided to reduce a short channel effect by increasing the channel length of a gate. A second active region(203) composed of a plurality of protrusions is formed on a first active region(201) whose surface is planarized. A gate insulation layer(205) is formed on the first and second active regions. At least the second active region is covered with a gate electrode. The gate electrode completely surrounds the second active region while partially covering the first active region. The gate insulation layer is composed of one of a hafnium oxide layer, a zirconium oxide layer or a silicon oxide layer.
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