| 摘要 |
A repair etch method for a semiconductor device is provided to guarantee an etch margin by forming an etch stop layer in a 1/3 position of the entire etch target for a repair etch process. A fuse line(35A) is formed on a semiconductor substrate(31). A multilayer insulation layer into which an etch stop layer(39) is inserted is formed on the fuse line. A passivation layer(42) is formed on the insulation layer. The insulation layer is etched by a repair etch process to be left by a predetermined thickness on the fuse line. The repair etch process is divided into first and second repair etch processes. The first repair etch process is performed until an etch process stops before the etch stop layer and a predetermined thickness of the insulation layer is left on the fuse line in the second repair etch process. A first oxide layer, an etch stop layer and a second oxide layer are sequentially stacked in the insulation layer. An oxide layer and a nitride layer are sequentially stacked in the passivation layer.
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