| 摘要 |
A method for forming a contact hole in a semiconductor device is provided to reduce at a process of an aspect ratio during a landing plug contact formation by reducing a thickness of insulating film etched for forming the landing plug contact. A method for forming a contact hole in a semiconductor device includes the steps of: supplying a substrate(10) forming a plurality of patterns; forming an etch barrier layer(18B) along a top surface of a total structure including the patterns; depositing interlayer insulating film so as to cover the top of the total structure including the etch barrier layer; flattening the interlayer insulating film with an abrasive stopping layer as the etch barrier layer; recessing the interlayer insulating film flattened so as to protrude the top of the patterns; depositing a hard mask(13) so as to be filled in a flexion formed by a recessed interlayer insulating film; patterning the hard mask by etching the hard mask; removing the exposed interlayer insulating film performing an etching process with a hard mask pattern(21A); and removing the hard mask pattern. Further, a dry or a wet type etch process is performed in the step of recessing the interlayer insulating film flattened.
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