METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device is provided to improve contact resistance of a peripheral circuit area forming a cobalt silicide film within a substrate of a bit line contact formation area of the peripheral circuit area and better an operation property of the semiconductor device. A method of manufacturing a semiconductor device includes the steps of: forming a first interlayer insulating film(17) on a front surface of a substrate covering gates composing of a gate insulating film, a gate conductive film, a laminated film of a hard mask film and separating a cell area(C) with a landing plug(23) forming a peripheral circuit area(P) with a bit line contact formation area; forming a contact hole exposing a landing plug formation area of a cell area; forming a polysilicon film on the first interlayer insulating film; performing a CMP(Chemical Mechanical Polishing) of the first interlayer insulating film and the polysilicon film; etching the first interlayer insulating film; forming a cobalt film on results of an etched substrate; and forming the landing plug and a cobalt silicide film(22).