| 摘要 |
A method for fabricating a semiconductor device having a bulb-type recess channel is provided to remove a leakage current generated in an adjacent junction region by a passing gate by minimizing a loss of an isolation layer. A first hard mask layer pattern is formed on a semiconductor substrate. A first trench for isolation is formed to define an active region by using the first hard mask layer pattern. The first hard mask layer pattern is selectively removed to form a second hard mask layer pattern exposing the active region. The bottom surface of the first trench for isolation is etched by using the second hard mask layer pattern as a mask so that a second trench for isolation is formed and a first recess groove is formed in the active region by an etch process. An isolation layer is formed to fill the second trench for isolation. A barrier layer is formed to expose the bottom surface of the first recess groove. A second recess groove of a spherical type is formed in the first recess groove by using a mask as the second hard mask layer pattern and the barrier layer. The second hard mask layer pattern and the barrier layer are eliminated. A gate stack(130) is formed which overlaps a bulb-type trench for a recess channel wherein the bulb-type trench is composed of the first and second recess grooves. The first trench can be formed in a depth shallower than a target depth.
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