METHOD FOR FORMING WORD LINE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a word line in a semiconductor device is provided to prevent stresses due to an abnormal deposition of a nitride film and a pin-hole and a crack in a following thermal process from being generated by forming an oxide film in a bit line contact area before depositing a nitride film for a spacer. A method for forming a word line in a semiconductor device includes the steps of: forming a gate electrode by interposing a gate insulating film(44) on a semiconductor substrate(40); forming a mask layer exposing a bit line contact forming area; implanting impurity ions in an exposed bit line contact; and forming an oxide film(52) on the semiconductor substrate of the bit line contact forming area. In the step of forming the oxide film in the bit line contact area, a wet cleaning process using DI water and O3 is performed.