| 摘要 |
A method for forming a storage node contact plug of a semiconductor memory device is provided to stably embody a contact between a storage node contact plug and a storage node by making a contact hole for a storage node contact plug in a structure composed of a via hole and a trench. A substrate(110) with a landing plug(119) is prepared. The landing plug is covered with a first interlayer dielectric. A hard mask pattern is formed on the first interlayer dielectric. A dry etch process is performed by using the hard mask pattern as an etch mask to etch the first interlayer dielectric and to form a via hole to which the landing plug is exposed. A wet etch process is performed by using the hard mask pattern as an etch mask to etch the upper portion of the first interlayer dielectric and to form a trench on the via hole. The via hole and the trench are buried in a storage node contact plug. The storage node contact plug has a circular structure.
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