METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to reduce the resistance of a metal silicide layer by performing an impurity ion implantation process for forming a source/drain before a heat treatment for removing etch damage is performed after a gate is etched. A gate(15) including a metal silicide layer is formed on a predetermined region of a semiconductor substrate(10). Impurity ions are implanted by using the gate as a mask to form a source/drain region in the semiconductor substrate at both sides of the gate and to implant the impurity ions into the lateral surface of the metal silicide layer. A heat treatment process and an oxide process are sequentially performed. In the oxide process, a sidewall oxide layer is formed on the lateral surface of the gate including the metal silicide layer and the silicon ratio in the metal silicide layer is reduced.