METHOD FOR FORMING GATE OXIDE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a gate oxide of a semiconductor device is provided to obtain reliable model characteristics by modifying polysilicon and an active region. A field oxide layer(102) is formed on an isolation layer of a semiconductor device(100). A well(104) is formed within a substrate of an active region defined by a field oxide layer by performing an ion implantation process. A gate electrode is formed by depositing and patterning sequentially a gate oxide layer and a conductive material. A photoresist pattern is formed. A contact hole is formed on the gate electrode by performing a dry-etching process. A contact(110) and a wiring(108) are formed to be connected to the gate electrode. The well region has a modified pattern in order to be included in the inside of the gate electrode.