| 摘要 |
A method for manufacturing a TFT(Thin Film Transistor) array substrate is provided to form a gate insulating layer and a protection layer with a composite thin film, a compound with a structure that a high permittivity of a metal oxide is combined with polymer through a chemical network, thereby improving the permittivity of the gate insulating layer, reducing the permittivity of the protection layer, and facilitating and simplifying the process. A method for manufacturing a TFT array substrate comprises the following steps of: forming a gate electrode on a substrate; forming a first composite thin film, a compound with a structure that polymer and a metal oxide forms a chemical network and has the permittivity of 6 to 10 in the front of the substrate including the gate electrode; forming a semiconductor layer on the first composite thin film of the upper part of the gate electrode; and forming separately source and drain electrodes in both sides of the semiconductor layer. |
