| 摘要 |
A susceptor and a sputtering apparatus applied with the same are provided to form a stripped-impurities gettering unit in the susceptor along an edge of a substrate mounted on the susceptor, thereby improving stripped-impurities gettering efficiency and reducing a fault rate as much as 84.2% in comparison with an existing susceptor by lowering the fault rate of processes from 0.41% to 0.09%. In a susceptor(200) where a substrate(300) on which a target is deposited is mounted, at least one or more stripped-impurities gettering units(210) are formed along a girth of the substrate mounted on the susceptor. The stripped-impurities gettering unit is formed so as to be engraved from the surface of the susceptor. A width of the stripped-impurities gettering unit is about 9mm to 10mm. An interval between the stripped-impurities gettering unit and an edge of the substrate is about 1mm to 2mm. |
