| 摘要 |
A method for fabricating a semiconductor device is provided to guarantee a process margin of excessive etch insufficiency for etching a barrier layer without increasing the height of an insulation layer by previously etching the pad open region of a barrier layer prior to a repair etch process, when a repair etch process and a pad etch process are performed simultaneously. A pad region and a fuse region are defined in a semiconductor substrate(31) and a metal interconnection for a fuse is formed on the fuse region. An insulation layer(33) is formed on the resultant structure. A metal interconnection for a pad is formed on the insulation layer in the pad region, made of a stack structure composed of a metal layer and a barrier layer. The barrier layer in the metal interconnection for the pad is partially etched to open a partial surface of the metal layer. A passivation layer is formed on the resultant structure. A repair etch process and a pad etch process are simultaneously performed so that a predetermined thickness of the insulation layer is left on the metal interconnection for the fuse while the metal layer in the metal interconnection for pad is opened. The barrier layer can be made of a titanium nitride layer(36). The barrier layer can be dry-etched.
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