METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to stabilize a formation process of the metal line by smoothly performing an etching process so as not to generate polymers. A method for forming a metal line of a semiconductor device includes the steps of: forming a first low dielectric film(25) on a semiconductor substrate(21) with a first metal line(23) buried in an insulating film(22); forming an etch stopping film(26) on a surface of the first low dielectric film processing a plasma on the surface of the first low dielectric film; forming a low second dielectric film(27) on the etch stopping film; forming a via hole(HV) exposing the first metal line by etching the second low dielectric film, the etch stopping film, and the first low dielectric film in order; forming a trench(T2) for a second metal line inside the second low dielectric film etching the second low dielectric film and the etch stopping film; forming a diffusion barrier(28) in a sidewall and a lower surface of the via hole and the trench; and filling a metal film inside the via hole and the trench formed at the diffusion barrier. Further, a barrier film is additionally formed on the semiconductor substrate before forming the first low dielectric film.