| 摘要 |
A ferroelectric capacitor (42) is formed on an upper portion of a semiconductor substrate (10), then, a barrier film (46) for directly covering the ferroelectric capacitor (42) is formed. Then, a wiring (56a or the like) to be connected to the ferroelectric capacitor (42) is formed. Furthermore, a barrier film (58) is formed upper than the wiring (42). At the time of forming the barrier film (46), a laminate is formed. The laminate is provided with at least two types of diffusion preventing films (46a, 46b) which have different components and prevent diffusion of hydrogen or water.
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