MEMORY DEVICES INCLUDING SPACER-SHAPED ELECTRODES ON PEDESTALS AND METHODS OF MANUFACTURING THE SAME

摘要

A NOR flash memory device includes a substrate having trenches that extend in a first direction and stepped portions that are arranged between the trenches. A bit region having a linear shape extends in a second direction substantially perpendicular to the first direction in the substrate. The bit region is doped with impurities. A first dielectric layer is on the substrate having the trenches. An electric charge trap layer is on the first dielectric layer. A second dielectric layer is on the electric charge trap layer. An upper electrode is on sidewalls of the trenches. The upper electrode has a spacer shape. Related fabrication methods are also described.