| 摘要 |
An LCD and a method for manufacturing the same are provided to form a photoresist pattern on a channel part of a TFT(Thin Film Transistor) using a diffraction exposure mask having a dummy light shielding portion to prevent the channel part from being over-etched, thereby minimizing the error rate of an antistatic circuit. A gate electrode(41) is formed on a substrate(20). A gate insulating layer(42) is formed on the resultant substrate including the gate electrode. An amorphous silicon layer(43), an impurity-doped amorphous silicon layer(44), a source/drain metal layer(46), and a photoresist layer are sequentially deposited on the gate insulating layer. A photoresist pattern(48) is formed by using a diffraction exposure mask(49) having a dummy light shielding portion(M2'). A channel region is formed by using the photoresist pattern. Source and drain electrodes, and a dummy layer are formed on the channel region. |
