METHOD OF FORMING P-TYPE COMPOUND SEMICONDUCTOR LAYER

摘要

Disclosed is a method of forming a p-type compound semiconductor layer. The method comprises increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. Then, a source gas of a Group III element, a source gas of a p- type impurity and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber so as to grow the p-type compound semiconductor layer. After the growth of the p-type compound semiconductor layer is completed, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. Thereafter, the supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from being bonded to the p-type impurity contained in the p-type compound semiconductor layer in the process of lowering the temperature of the substrate.