| 摘要 |
A method for polishing an inter-metal dielectric layer of a semiconductor device is provided to increase a yield of the semiconductor device by improving a planarization characteristic of the inter-metal dielectric layer. A plurality of inter-metal dielectric layers(112,116,120) are formed on a front surface of a semiconductor substrate(100) on which a semiconductor element is formed. An etching residue(122) is generated by etching back the inter-metal dielectric layers. The etching residue is shifted to a low stepped part of the inter-metal dielectric layers. The etching residue is fixed on the inter-metal dielectric layer by performing an annealing process for the inter-metal dielectric layer. The inter-metal dielectric layer is etched as much as the predetermined thickness. A planarization is performed to planarize a surface of the inter-metal dielectric layer.
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